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| Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1034 and 2SA1035 Unit: mm 0.40+0.10 n0.05 3 1.50+0.25 -0.05 2.8+0.2 -0.3 s Features q q q 0.16+0.10 -0.06 Low noise voltage NV. High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25C) Ratings 35 55 35 55 5 100 50 200 150 -55 ~ +150 Unit V 10 1 2 (0.65) s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SC2405 2SC2406 2SC2405 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol (0.95) (0.95) 1.90.1 2.90+0.20 -0.05 1.1+0.2 -0.1 emitter voltage 2SC2406 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V mA mA mW C C 1:Base 2:Emitter 3:Collector 0 to 0.1 V 1.1+0.3 -0.1 EIAJ:SC-59 Mini3-G1 Package Marking symbol : S(2SC2405) T(2SC2406) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage 2SC2405 2SC2406 2SC2405 2SC2406 (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) VBE fT NV Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 5V, IE = -2mA IC = 100mA, IB = 10mA VCE = 1V, IC = 100mA VCB = 5V, IE = -2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100k, Function = FLAT 0.7 200 110 35 55 35 55 5 180 700 0.6 1 V V MHz mV min typ max 100 1 Unit nA A V V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage *h FE Rank classification Rank hFE R 180 ~ 360 SR TR S 260 ~ 520 SS TS T 360 ~ 700 ST TT Marking Symbol 2SC2405 2SC2406 353 0.40.2 5 Transistor PC -- Ta 250 160 140 2SC2405, 2SC2406 IC -- VCE Ta=25C 160 VCE=5V Ta=25C 140 IB=350A 300A 100 250A 80 60 40 02 0 200A 150A 100A IC -- I B Collector power dissipation PC (mW) 225 Collector current IC (mA) 120 Collector current IC (mA) 200 175 150 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 120 100 80 60 40 20 0 50A 0 2 4 6 8 10 12 0 0.1 0.2 0.3 0.4 0.5 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) IC -- VBE Collector to emitter saturation voltage VCE(sat) (V) 120 25C 100 VCE=5V 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 VCE(sat) -- IC IC/IB=10 1000 900 800 700 600 500 400 300 200 100 0 0.1 hFE -- IC VCE=5V Collector current IC (mA) Ta=75C 80 -25C 60 Forward current transfer ratio hFE Ta=75C 25C -25C 40 25C Ta=75C 20 -25C 0 0 0.4 0.8 1.2 1.6 2.0 0.3 1 3 10 30 100 0.3 1 3 10 30 100 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) fT -- IE 500 450 Cob -- VCB Collector output capacitance Cob (pF) VCB=5V Ta=25C 10 9 8 7 6 5 4 3 2 1 0 0.1 IE=0 f=1MHz Ta=25C 160 140 NV -- VCE IC=1mA GV=80dB Function=FLAT Rg=100k 100 80 60 40 20 0 22k Transition frequency fT (MHz) Noise voltage NV (mV) 400 350 300 250 200 150 100 50 0 - 0.1 - 0.3 120 4.7k -1 -3 -10 -30 -100 0.3 1 3 10 30 100 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 354 Transistor NV -- VCE 300 Rg=100k 160 140 VCE=10V GV=80dB Function=FLAT 2SC2405, 2SC2406 NV -- IC 300 VCE=10V GV=80dB Function=RIAA NV -- IC Noise voltage NV (mV) Noise voltage NV (mV) IC=1mA GV=80dB Function=RIAA 180 120 100 80 60 22k 40 4.7k 20 0 0.01 Rg=100k Noise voltage NV (mV) 240 240 180 120 22k 60 4.7k 120 Rg=100k 60 22k 4.7k 0 1 3 10 30 100 0.03 0.1 0.3 1 0 0.01 0.03 0.1 0.3 1 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) NV -- Rg 160 140 VCE=10V GV=80dB Function=FLAT 300 NV -- Rg VCE=10V GV=80dB Function=RIAA Noise voltage NV (mV) 120 100 80 IC=1mA 60 40 20 0 1 3 10 30 100 0.5mA 0.1mA Noise voltage NV (mV) 240 180 IC=1mA 120 0.5mA 60 0.1mA 0 1 3 10 30 100 Signal source resistance Rg (k) Signal source resistance Rg (k) 355 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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